byg10d thru byg10y vishay general semiconductor document number: 88957 revision: 03-jun-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 standard avalanche smd rectifier features ? low profile package ? ideal for automated placement ? controlled avalanche characteristics ? glass passivated junction ? low reverse current ? high surge current capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in generell purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. mechanical data case: do-214ac (sma) epoxy meets ul 94 v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec-q101 qualified), meets jesd 201 class 2 whisker test note: ? byg10y for commercial grade only polarity: color band denotes the cathode end primary characteristics i f(av) 1.5 a v rrm 200 v to 1600 v i fsm 30 a i r 1.0 a v f 1.15 v e r 20 mj t j max. 150 c do-214ac (sma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol byg10d byg10g byg10j BYG10K byg10m byg10y unit device marking code byg10d byg10g byg10j BYG10K byg10m byg10y maximum repetitive peak reverse voltage v rrm 200 400 600 800 1000 1600 v average forward current i f(av) 1.5 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 30 a pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r = 1 a, t j = 25 c (for byg10d-byg10m) e r 20 mj operating junction and storage temperature range t j , t stg - 55 to + 150 c
byg10d thru byg10y vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88957 revision: 03-jun-09 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle notes: (1) mounted on epoxy-glass hard tissue (2) mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu (3) mounted on al-oxide-ceramic (al 2 o 3 ), 50 mm 2 35 m cu note: (1) aec-q101 qualified electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol byg10d byg10g byg10j BYG10K byg10m byg10y unit maximum instantaneous forward voltage (1) i f = 1 a i f = 1.5 a t j = 25 c v f 1.1 1.15 v maximum dc reverse current v r = v rrm t j = 25 c t j = 100 c i r 1 10 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 4s thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol byg10d byg10g byg10j BYG10K byg10m byg10y unit typical thermal resistance, junction to lead r jl 25 c/w typical thermal resistance, junction to ambient r ja 150 (1) 125 (2) 100 (3) c/w ordering information (example) preferred p/n unit weight (g) package code base quantity delivery mode byg10d-e3/tr 0.064 tr 1800 7" diameter plastic tape and reel byg10d-e3/tr3 0.064 tr3 7500 13" diameter plastic tape and reel byg10dhe3/tr (1) 0.064 tr 1800 7" diameter plastic tape and reel byg10dhe3/tr3 (1) 0.064 tr3 7500 13" diameter plastic tape and reel
byg10d thru byg10y vishay general semiconductor document number: 88957 revision: 03-jun-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 ratings and characteristics curves (t a = 25 c unless otherwise noted) figure 1. forward current vs. forward voltage figure 2. max. average forward cu rrent vs. ambient temperature figure 3. reverse current vs. junction temperature 0.001 0.01 0.1 1 10 100 0 0.5 1.0 1.5 2.0 2.5 3.0 for w ar d v oltage ( v ) for w ard c u rrent (a) t j = 150 c t j = 25 c 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0 204060 8 0 100 120 140 160 am b ient temperat u re (c) a v erage for w ard c u rrent (a) r ja 125 k/ w r ja 150 k/ w v r = v rrm half sine- w a v e r ja 25 k/ w 1 10 100 1000 25 50 75 100 125 150 re v erse c u rrent ( a) j u nction temperat u re (c) v r = v rrm figure 4. max. reverse power dissi pation vs. junction temperature figure 5. diode capacitance vs. reverse voltage figure 6. reverse recovery time vs. forward current 0 50 100 150 200 250 300 350 400 25 50 75 100 125 150 v r = v rrm p r - limit at 100 % v r re v erse po w er dissipation (m w ) j u nction temperat u re (c) p r - limit at 8 0 % v r 0 5 10 15 20 25 30 0.1 1 10 100 f = 1 mhz re v erse v oltage ( v ) diode capac itance (pf) 0 0 1000 2000 3000 4000 5000 0.2 0.4 0.6 0. 8 re v erse reco v ery time (ns) for w ard c u rrent (a) 1.0 t a = 100 c t a = 125 c t a = 25 c t a = 75 c t a = 50 c i r = 0.5 a, i r = 0.125 a
byg10d thru byg10y vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88957 revision: 03-jun-09 4 package outline dimensions in inches (millimeters) figure 7. reverse recovery charge vs. forward current 0 0 400 8 00 1200 1600 2000 0.2 0.4 0.6 0. 8 re v erse reco v ery charge (nc) for w ard c u rrent (a) 1.0 t a = 100 c t a = 125 c t a = 25 c t a = 75 c t a = 50 c i r = 0.5 a, i r = 0.125 a 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.203) 0.194 (4.93) 0.20 8 (5.2 8 ) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.07 8 (1.9 8 ) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) mountin g pad layout 0.074 (1. 88 ) max. 0.20 8 (5.2 8 ) ref. 0.066 (1.6 8 ) mi n . 0.060 (1.52) mi n .
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